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BUK9535-100A,127

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BUK9535-100A,127

MOSFET N-CH 100V 41A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ MOSFET, part number BUK9535-100A-127, is an N-channel power MOSFET with a drain-source voltage (Vdss) of 100V. This through-hole component, housed in a TO-220AB package, offers a continuous drain current (Id) of 41A at 25°C and a maximum power dissipation of 149W at the same temperature. Key electrical parameters include a maximum on-resistance (Rds On) of 34mOhm at 25A and 10V, and input capacitance (Ciss) of 3573pF at 25V. The device supports gate-source drive voltages (Vgs) from 4.5V to 10V, with a maximum Vgs of ±10V and a threshold voltage (Vgs(th)) of 2V at 1mA. The operating temperature range is -55°C to 175°C (TJ). This device is suitable for applications in industrial and automotive sectors.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Rds On (Max) @ Id, Vgs34mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)149W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds3573 pF @ 25 V

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