BUK952R8-60E,127
MOSFET N-CH 60V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK952R8-60E-127. This device features a 60V drain-source voltage and a continuous drain current of 120A at 25°C case temperature, with a maximum power dissipation of 349W (Tc). The low on-resistance is specified as 2.6mOhm at 25A and 10V Vgs. The NXP BUK952R8-60E-127 utilizes a TO-220AB through-hole package, ideal for power management applications in automotive, industrial, and consumer electronics sectors where high current handling and efficiency are critical. Gate drive voltage ranges from 5V to 10V. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17450 pF @ 25 V |
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