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BUK9523-75A,127

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BUK9523-75A,127

MOSFET N-CH 75V 53A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ BUK9523-75A-127 is a high-performance N-channel power MOSFET designed for demanding applications. This component features a 75 V drain-source voltage (Vdss) and a continuous drain current (Id) of 53A at 25°C (Tc), with a maximum power dissipation of 138W (Tc). The BUK9523-75A-127 offers a low on-resistance (Rds On) of 22mOhm at 25A and 10V, with a threshold voltage (Vgs(th)) of 2V at 1mA. Its input capacitance (Ciss) is 3120 pF at 25 V. The device utilizes advanced TrenchMOS™ technology for enhanced efficiency and performance. It operates within a temperature range of -55°C to 175°C (TJ) and is housed in a standard TO-220AB package, suitable for through-hole mounting. Key electrical characteristics include a gate-source voltage (Vgs) range of ±10V and drive voltage options from 4.5V to 10V for optimal Rds On performance. This component is commonly found in industrial power supplies, automotive systems, and motor control applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)138W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds3120 pF @ 25 V

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