BUK9520-55,127
MOSFET N-CH 55V 52A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9520-55-127 is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 52A at 25°C, with a maximum power dissipation of 116W. The Rds On is optimized at 20mOhm maximum, specified at 25A and 5V gate drive. Key parameters include an input capacitance of 2400 pF at 25V and a threshold voltage (Vgs(th)) of 2V at 1mA. Operating across a temperature range of -55°C to 175°C, this MOSFET is housed in a standard TO-220AB package. Its robust specifications make it suitable for use in automotive and industrial power switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 116W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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