BUK951R6-30E,127
MOSFET N-CH 30V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK951R6-30E-127 is a high-performance N-channel power MOSFET designed for demanding applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 120A at 25°C case temperature, with a maximum power dissipation of 349W (Tc). The low on-resistance of 1.4mOhm at 25A and 10V gate drive voltage (Vgs) ensures efficient power transfer. Key parameters include a gate charge (Qg) of 113 nC at 5V and input capacitance (Ciss) of 16150 pF at 25V. The BUK951R6-30E-127 utilizes a TO-220AB through-hole package, suitable for power switching and motor control circuits within the automotive and industrial sectors. Operating junction temperature range is -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16150 pF @ 25 V |
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