BUK95180-100A,127
MOSFET N-CH 100V 11A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel power MOSFET, part number BUK95180-100A-127. This TO-220AB packaged device offers a 100V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C. Featuring a low on-resistance of 173mOhm maximum at 5A and 10Vgs, this component is suitable for demanding applications. It operates with gate-source voltages up to ±15V and a threshold voltage of 2V at 1mA. The BUK95180-100A-127 provides a maximum power dissipation of 54W (Tc) and an operating junction temperature range of -55°C to 175°C. Applications include power switching and motor control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 173mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 619 pF @ 25 V |
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