BUK9516-75B,127
MOSFET N-CH 75V 67A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9516-75B-127 is a high-performance N-Channel Power MOSFET. This device features a Drain-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) of 67 A at 25°C (Tc), with a maximum power dissipation of 157 W (Tc). The low on-resistance (Rds On) of 14 mOhm is achieved at 25 A and 10 V gate-source voltage. Input capacitance (Ciss) is specified at a maximum of 4034 pF at 25 V, and gate charge (Qg) is 35 nC at 5 V. Designed for through-hole mounting in a TO-220AB package, this MOSFET operates across a junction temperature range of -55°C to 175°C. Applications include automotive, industrial power control, and general-purpose switching power supplies.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4034 pF @ 25 V |
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