BUK95150-55A,127
MOSFET N-CH 55V 13A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, BUK95150-55A-127, is a high-performance power MOSFET designed for demanding applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C, with a maximum power dissipation of 53W. The BUK95150-55A-127 offers a low on-resistance of 137mOhm at 13A and 10V, with a gate-source threshold voltage (Vgs(th)) of 2V at 1mA. It is packaged in a standard TO-220AB through-hole package, suitable for robust thermal management. With a wide operating temperature range of -55°C to 175°C, this MOSFET is ideal for use in automotive, industrial, and power supply applications. The device utilizes advanced TrenchMOS™ technology for optimized performance and efficiency.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 339 pF @ 25 V |
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