BUK9515-60E,127
MOSFET N-CH 60V 54A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9515-60E-127 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage (Vds) and a continuous drain current (Id) of 54A at 25°C, with a maximum power dissipation of 96W (Tc). The low on-resistance (Rds On) of 13mOhm at 15A and 10V gate-source voltage (Vgs) ensures efficient power transfer. Fabricated using advanced TrenchMOS™ technology, it offers excellent switching characteristics and thermal performance. The BUK9515-60E-127 is housed in a standard TO-220AB through-hole package, facilitating ease of assembly in power management circuits. Key parameters include a maximum gate charge (Qg) of 20.5nC at 5V Vgs and an input capacitance (Ciss) of 2651pF at 25V Vds. This MOSFET is suitable for use in industrial power supplies, automotive systems, and motor control applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2651 pF @ 25 V |
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