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BUK9509-75A,127

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BUK9509-75A,127

MOSFET N-CH 75V 75A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ MOSFET N-Channel, part number BUK9509-75A-127. This through-hole component offers a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C. Featuring an Rds On of 8.5mOhm maximum at 25A and 10V, this device is constructed with NXP's advanced TrenchMOS technology. The BUK9509-75A-127 is packaged in a TO-220AB, dissipating up to 230W at Tc. It operates across a temperature range of -55°C to 175°C (TJ) and is suitable for applications in automotive, industrial, and power supply sectors. Drive voltages range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±10V. Input capacitance (Ciss) is a maximum of 8840 pF at 25V.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tj)
Rds On (Max) @ Id, Vgs8.5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)230W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds8840 pF @ 25 V

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