BUK9509-55A,127
MOSFET N-CH 55V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9509-55A-127 is a high-performance N-Channel Power MOSFET in a TO-220AB package, designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 211W (Tc). The low on-resistance (Rds On) of 8mOhm at 25A and 10V gate-source voltage (Vgs) ensures efficient operation. Key electrical characteristics include a gate charge (Qg) of 60 nC at 5V Vgs and an input capacitance (Ciss) of 4633 pF at 25V Vds. The device supports a wide Vgs range from 4.5V to 10V for optimal performance and has a maximum Vgs of ±15V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial power, and general-purpose switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 211W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4633 pF @ 25 V |
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