BUK9506-55B,127
MOSFET N-CH 55V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9506-55B-127 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 75 A at 25°C, with a maximum power dissipation of 258 W at the same temperature. The low on-resistance (Rds On) of 5.4 mOhm is achieved at 25 A and 10 V Vgs, ensuring minimal conduction losses. It operates with a gate drive voltage range from 4.5V to 10V and has a maximum gate-source voltage of ±15V. Key electrical characteristics include a typical gate charge of 60 nC at 5 V and an input capacitance (Ciss) of 7565 pF at 25 V. The device is housed in a TO-220AB package, suitable for through-hole mounting, and operates within an extended temperature range of -55°C to 175°C. This MOSFET is widely utilized in automotive systems, industrial power supplies, and power management solutions.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 258W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7565 pF @ 25 V |
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