BUK9240-100A/C1,11
MOSFET N-CH 100V 33A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9240-100A-C1-11 is a high-performance N-channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 33A at 25°C (Tc). With a maximum power dissipation of 114W (Tc), it is well-suited for power conversion, motor control, and automotive systems. The device offers a low on-resistance (Rds On) of 38.6mOhm at 25A and 10V, achievable with a gate-source voltage range of 4.5V to 10V. Its surface mount DPAK package (TO-252-3, DPAK) ensures efficient thermal management, operating across an extended temperature range of -55°C to 175°C (TJ). The BUK9240-100A-C1-11 exhibits a typical input capacitance (Ciss) of 3072 pF at 25V, and a maximum gate-source voltage (Vgs) of ±10V. This NXP USA Inc. MOSFET is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 38.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3072 pF @ 25 V |
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