BUK9213-30A,118
MOSFET N-CH 30V 55A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The NXP USA Inc. BUK9213-30A-118 is a TrenchMOS™ series N-Channel Power MOSFET designed for high-performance applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 55A at 25°C case temperature. With a low on-resistance of 11mOhm at 25A and 10V Vgs, it minimizes conduction losses. The MOSFET supports a gate-source voltage range of ±15V and a threshold voltage of 2V at 1mA. Key parameters include a maximum gate charge of 37nC at 5V and an input capacitance of 2852pF at 25V. The BUK9213-30A-118 is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating efficient thermal management with a maximum power dissipation of 150W at the case temperature. This component is suitable for use in automotive and industrial power systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2852 pF @ 25 V |
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