BUK7Y54-75B,115
MOSFET N-CH 75V 21.4A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK7Y54-75B-115 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 75V drain-source breakdown voltage and a continuous drain current capability of 21.4A at 25°C (Tc), with a maximum power dissipation of 59W (Tc). The BUK7Y54-75B-115 exhibits a low on-resistance of 54mOhm at 10A and 10V, optimized for efficient power handling. Its low gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 803 pF at 25V contribute to efficient switching characteristics.
The MOSFET is housed in a compact LFPAK56, Power-SO8 (SC-100, SOT-669) surface mount package, suitable for space-constrained designs. It operates across a wide temperature range from -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power control, and general-purpose switching applications where robust performance and reliability are paramount. The BUK7Y54-75B-115 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 59W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 803 pF @ 25 V |
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