BUK7Y25-80E/GFX
MOSFET N-CH 80V 39A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7Y25-80E-GFX, is designed for demanding applications requiring high current handling and efficient switching. This device features an 80V drain-source voltage and a continuous drain current of 39A at 25°C. The BUK7Y25-80E-GFX offers a low on-resistance of 25mOhm maximum at 10A and 10V Vgs, crucial for minimizing conduction losses. With a maximum power dissipation of 95W (Tc), it ensures reliable operation in thermal-constrained environments. The device is packaged in a space-saving LFPAK56, Power-SO8 (SC-100, SOT-669) for surface mounting, suitable for automotive and industrial power supplies, motor control, and lighting applications. Key parameters include a gate charge of 25.9 nC at 10V and input capacitance of 1800 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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