BUK7E4R3-75C,127
MOSFET N-CH 75V 100A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7E4R3-75C-127. This device offers a 75V drain-to-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). Featuring a low on-resistance of 4.3mOhm at 25A and 10V, this MOSFET is designed for high-efficiency power switching. Key parameters include a gate charge (Qg) of 142 nC at 10V and an input capacitance (Ciss) of 11659 pF at 25V. The NXP BUK7E4R3-75C-127 operates across a wide temperature range of -55°C to 175°C (TJ). Housed in an I2PAK (TO-262-3 Long Leads) package, this component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11659 pF @ 25 V |
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