BUK7E4R0-80E,127
MOSFET N-CH 80V 120A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ BUK7E4R0-80E-127 is an N-Channel Power MOSFET designed for high-efficiency power applications. This device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 120A at 25°C with a maximum power dissipation of 349W (Tc). The on-resistance (Rds On) is specified at a low 4mOhm at 25A and 10V gate drive. Key parameters include a gate charge (Qg) of 169 nC @ 10V and input capacitance (Ciss) of 12030 pF @ 25V. The BUK7E4R0-80E-127 is packaged in an I2PAK (TO-262-3 Long Leads, TO-262AA) for through-hole mounting, offering a robust solution for demanding thermal environments with an operating temperature range of -55°C to 175°C. This component is suitable for use in automotive, industrial motor control, and power supply applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 169 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12030 pF @ 25 V |
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