BUK7E2R7-30B,127
MOSFET N-CH 30V 75A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7E2R7-30B-127. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 2.7mOhm at 25A and 10V Vgs. With a maximum power dissipation of 300W (Tc), this MOSFET is suitable for demanding applications. Key parameters include a gate charge of 91 nC at 10V and an input capacitance of 6212 pF at 25V. It operates within a temperature range of -55°C to 175°C (TJ). The component is housed in an I2PAK package (TO-262-3 Long Leads, TO-262AA) for through-hole mounting. This MOSFET technology is utilized in industrial and automotive applications requiring robust power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6212 pF @ 25 V |
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