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BUK7880-55A,115

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BUK7880-55A,115

MOSFET N-CH 55V 7A SOT-223

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ BUK7880-55A-115 is an N-Channel MOSFET designed for robust performance. This device features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. The Rds On is specified at a maximum of 80mOhm at 10A and 10V gate-source voltage. Its low gate charge (Qg) of 12 nC at 10V and input capacitance (Ciss) of 500 pF at 25V contribute to efficient switching characteristics. The BUK7880-55A-115 is qualified to AEC-Q101 and boasts an automotive grade, making it suitable for demanding automotive applications. It is housed in a TO-261-4, TO-261AA (SC-73) surface mount package, offering a maximum power dissipation of 8W. The operating temperature range is -55°C to 150°C (TJ). This component finds utility in various automotive power management and switching circuits.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs80mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)8W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageSC-73
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 25 V
QualificationAEC-Q101

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