BUK7880-55,135
MOSFET N-CH 55V 3.5A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK7880-55-135. This automotive-grade MOSFET features a 55V drain-source breakdown voltage and a continuous drain current capability of 3.5A at 25°C (Ta). With a maximum Rds(on) of 80mOhm at 5A and 10Vgs, it is suitable for high-efficiency switching applications. The device operates with a gate-source voltage range of ±16V and a threshold voltage of 4V at 1mA. It offers a power dissipation of 1.8W (Ta) and an operating junction temperature range of -55°C to 150°C. The BUK7880-55-135 is supplied in an SC-73 (TO-261-4) surface-mount package, presented on tape and reel. This component is qualified to AEC-Q101 standards, making it suitable for automotive and industrial control applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SC-73 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
| Qualification | AEC-Q101 |
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