BUK78150-55A,135
MOSFET N-CH 55V 5.5A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ MOSFET, part number BUK78150-55A-135, is an N-channel power MOSFET designed for robust performance. This component features a 55V drain-source breakdown voltage and a continuous drain current capability of 5.5A at 25°C (Tc), with a maximum power dissipation of 8W (Tc). The BUK78150-55A-135 offers a low on-resistance of 150mOhm at 5A and 10V gate-source voltage. Its AEC-Q101 qualification signifies suitability for automotive applications. The device is packaged in an SC-73 (TO-261-4, TO-261AA) surface-mount case and is supplied on tape and reel (TR). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in automotive power management and general-purpose switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SC-73 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
