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BUK7628-100A,118

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BUK7628-100A,118

MOSFET N-CH 100V 47A D2PAK

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ BUK7628-100A-118 is an N-Channel power MOSFET designed for high-performance applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 47A at 25°C (Tc). The device boasts a low on-resistance of 28mOhm maximum at 25A and 10V (Vgs), facilitated by its TrenchMOS™ technology. With a maximum power dissipation of 166W (Tc) and an operating junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The BUK7628-100A-118 is supplied in a D2PAK (TO-263-3, D2PAK) surface-mount package and is AEC-Q101 qualified, making it ideal for automotive applications. Key parameters include 3100 pF (typ) input capacitance (Ciss) and a gate-source threshold voltage (Vgs(th)) of 4V (max) at 1mA.

Additional Information

Series: TrenchMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)166W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V
QualificationAEC-Q101

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