BUK761R5-40EJ
MOSFET N-CH 40V 120A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ series N-channel power MOSFET, part number BUK761R5-40EJ. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 120A at 25°C (Tc). The low on-resistance (Rds On) is specified at a maximum of 1.51mOhm at 25A and 10V gate-source voltage. Designed for surface mounting in the TO-263-3, D2PAK package, it offers a high power dissipation capability of 349W (Tc). Key parameters include a typical gate charge (Qg) of 145 nC @ 10V and input capacitance (Ciss) of 11340 pF @ 25V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.51mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11340 pF @ 25 V |
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