BUK761R4-30E,118
MOSFET N-CH 30V 120A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK761R4-30E-118, is a high-performance power device designed for demanding applications. This surface mount component, housed in a TO-263-3, D2PAK package, offers a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 120A at 25°C. Its low on-resistance (Rds On) of 1.45mOhm at 25A and 10V gate drive, coupled with a maximum power dissipation of 324W, makes it suitable for power switching and motor control applications. Key electrical parameters include a gate charge (Qg) of 130 nC max at 10V and input capacitance (Ciss) of 9580 pF max at 25V. The device operates within an extended temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) range of ±20V. Supplied in Tape & Reel packaging, this MOSFET is utilized in industries such as automotive and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.45mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 324W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9580 pF @ 25 V |
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