BUK7616-55A,118
MOSFET N-CH 55V 65.7A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK7616-55A-118, is a 55V device with a continuous drain current capability of 65.7A at 25°C. This surface mount component, housed in a D2PAK (TO-263-3) package, offers a maximum power dissipation of 138W. The Rds On is specified at a maximum of 16mOhm at 25A and 10V Vgs. Key parameters include a Vgs(th) of 4V at 1mA and an input capacitance (Ciss) of 2245pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET finds application in automotive, industrial, and power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 138W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2245 pF @ 25 V |
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