BUK7615-100A,118
MOSFET N-CH 100V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK7615-100A-118 is a high-performance N-Channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). The low on-resistance (Rds On) of 15mOhm at 25A and 10V gate drive makes it suitable for efficient power switching. It offers a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 4V at 1mA. Input capacitance (Ciss) is specified at 6000pF at 25V. The BUK7615-100A-118 is supplied in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) surface mount package, delivered on tape and reel. This component finds application in automotive and industrial power control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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