BUK7609-55A,118
MOSFET N-CH 55V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. presents the BUK7609-55A-118, a TrenchMOS™ N-Channel Power MOSFET. This component features a 55V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 75A at 25°C (Tc). The Rds On is specified at a maximum of 9mOhm at 25A and 10V gate-source voltage. With a maximum power dissipation of 211W (Tc), it is designed for demanding applications. The BUK7609-55A-118 is housed in a TO-263-3, D2PAK package for efficient surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 62 nC at 0V and a maximum input capacitance (Ciss) of 3271 pF at 25V. This MOSFET is suitable for use in automotive, industrial, and power supply sectors where robust switching performance is critical. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 211W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 0 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3271 pF @ 25 V |
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