BUK7605-30A,118
MOSFET N-CH 30V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ series N-channel power MOSFET, part number BUK7605-30A-118. This surface mount device features a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). With a low on-resistance of 5mOhm maximum at 25A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 230W (Tc). The device is housed in a TO-263-3, D2PAK package for robust thermal performance. Key parameters include a gate-source voltage range of ±20V and a threshold voltage of 4V (max) at 1mA. This MOSFET is suitable for applications in automotive, industrial control, and power supply sectors requiring high current switching and low conduction losses. Supplied on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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