BUK754R7-60E,127
MOSFET N-CH 60V 100A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK754R7-60E-127 is an N-channel power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 234W (Tc). The low on-resistance (Rds On) is specified at 4.6mOhm at 25A and 10V gate drive. Gate charge (Qg) is a maximum of 82 nC at 10V, and input capacitance (Ciss) is 6230 pF maximum at 25V. The TO-220AB package allows for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 234W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6230 pF @ 25 V |
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