Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

BUK754R3-75C,127

Banner
productimage

BUK754R3-75C,127

MOSFET N-CH 75V 100A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ series N-channel power MOSFET, part number BUK754R3-75C-127. This through-hole component features a 75 V drain-source voltage and a continuous drain current of 100 A at 25°C, with a maximum power dissipation of 333 W. The Rds On is specified at a low 4.3 mOhm at 25 A and 10 V gate drive. Key characteristics include a gate charge of 142 nC at 10 V and an input capacitance of 11659 pF at 25 V. The device operates across a wide temperature range of -55°C to 175°C. This MOSFET is commonly utilized in industrial motor control, power supply, and automotive applications. It is supplied in a TO-220AB package.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)333W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11659 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BSS138P,215

MOSFET N-CH 60V 360MA TO236AB

product image
PMGD290XN,115

MOSFET 2N-CH 20V 0.86A 6TSSOP

product image
PSMN102-200Y,115

MOSFET N-CH 200V 21.5A LFPAK56