Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

BUK754R3-40B,127

Banner
productimage

BUK754R3-40B,127

MOSFET N-CH 40V 75A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ BUK754R3-40B-127 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 75A at 25°C (Tc). With a low on-resistance (Rds On) of 4.3mOhm at 25A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 254W (Tc) and operates within an extended temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 69nC at 10V and input capacitance (Ciss) of 4824pF at 25V. Packaged in a TO-220AB through-hole configuration, it is suitable for industrial, automotive, and power supply applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs4.3mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)254W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4824 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BSS138P,215

MOSFET N-CH 60V 360MA TO236AB

product image
PMGD290XN,115

MOSFET 2N-CH 20V 0.86A 6TSSOP

product image
PSMN102-200Y,115

MOSFET N-CH 200V 21.5A LFPAK56