BUK753R5-60E,127
MOSFET N-CH 60V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK753R5-60E-127 is a 60V N-Channel Power MOSFET designed for high-current switching applications. This component features a low Rds(on) of 3.5mOhm at 25A and 10V Vgs, enabling efficient power delivery. With a continuous drain current capability of 120A (Tc) and a maximum power dissipation of 293W (Tc), it is suitable for demanding power management tasks. The TO-220AB package with through-hole mounting facilitates integration into robust circuit designs. Key parameters include a gate charge (Qg) of 114 nC at 10V and input capacitance (Ciss) of 8920 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET finds application in automotive, industrial, and power supply systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 293W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8920 pF @ 25 V |
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