BUK753R4-30B,127
MOSFET N-CH 30V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK753R4-30B-127 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a low Rds(on) of 3.4mOhm at 25A and 10V Vgs, ensuring minimal conduction losses. With a continuous drain current capability of 75A at 25°C and a maximum power dissipation of 255W, it is suitable for demanding power conversion tasks. The device operates with a drain-source voltage of 30V and a gate-source voltage range of ±20V, with a threshold voltage of 4V at 1mA. Key parameters include a gate charge of 75nC and input capacitance of 4951pF. Packaged in a standard TO-220AB through-hole configuration, the BUK753R4-30B-127 is utilized in industrial power supplies, automotive electronics, and motor drive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 255W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4951 pF @ 25 V |
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