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BUK753R1-40B,127

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BUK753R1-40B,127

MOSFET N-CH 40V 75A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET. This BUK753R1-40B-127 is a 40V device with a continuous drain current capability of 75A at 25°C (Tc). It features a low on-resistance of 3.1mOhm at 25A and 10V Vgs. The device offers a maximum power dissipation of 300W (Tc) and a gate charge of 94 nC at 10V Vgs. With a junction-to-case thermal resistance, it is suitable for high-power applications. The TO-220AB package with through-hole mounting is standard for robust thermal management. This MOSFET is utilized in industrial power supplies, automotive systems, and motor control applications. Operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs3.1mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6808 pF @ 25 V

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