BUK7535-55A,127
PFET, 35A I(D), 55V, 0.035OHM, 1Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PFET, BUK7535-55A-127, is an N-channel power MOSFET designed for high-current applications. This component offers a continuous drain current of 35A (Tc) and a drain-to-source voltage (Vdss) of 55V. With a low on-resistance (Rds On) of 35mOhm at 20A and 10V, it ensures efficient power delivery. The device features a maximum power dissipation of 85W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Mounting is via through-hole with a TO-220AB package. Key parameters include an input capacitance (Ciss) of 872pF (Max) at 25V and a gate-source breakdown voltage (Vgs(max)) of ±20V. This MOSFET is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 872 pF @ 25 V |
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