BUK752R7-60E,127
MOSFET N-CH 60V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK752R7-60E-127 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 349W at the same temperature. The low on-resistance of 2.6mOhm at 25A and 10V drive voltage ensures efficient power transfer. With a gate charge of 158 nC at 10V and an input capacitance of 11180 pF at 25V, this MOSFET is suitable for high-frequency switching. Packaged in a TO-220AB through-hole configuration, it operates across a wide temperature range from -55°C to 175°C. This device is commonly found in industrial power supplies, automotive systems, and motor control circuits.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11180 pF @ 25 V |
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