BUK752R7-30B,127
MOSFET N-CH 30V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET BUK752R7-30B-127. This Through Hole component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 75A at 25°C (Tc). The Rds On is specified at a maximum of 2.7 mOhm at 25A and 10V, with a Gate Charge (Qg) of 91 nC at 10V. The device offers a maximum power dissipation of 300W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). It is supplied in a TO-220AB package. This MOSFET is suitable for applications in automotive and industrial power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6212 pF @ 25 V |
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