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BUK7523-75A,127

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BUK7523-75A,127

MOSFET N-CH 75V 53A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ BUK7523-75A-127 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 75V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 53A at 25°C (Tc), with a maximum power dissipation of 138W (Tc). The BUK7523-75A-127 exhibits a low on-resistance (Rds On) of 23mOhm at 25A and 10V gate-source voltage, facilitated by its TrenchMOS™ technology. It supports a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 4V at 1mA. Input capacitance (Ciss) is rated at a maximum of 2385 pF at 25V. Packaged in a TO-220AB through-hole configuration, this device is suitable for demanding applications in automotive, industrial motor control, and power supply sectors. Operating temperature range spans from -55°C to 175°C (TJ).

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)138W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds2385 pF @ 25 V

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