BUK7516-55A,127
PFET, 65.7A I(D), 55V, 0.016OHM,Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK7516-55A-127 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 65.7A at 25°C (Tc), with a maximum power dissipation of 138W (Tc). Its low on-resistance (Rds On) of 16mOhm at 25A and 10V drive voltage minimizes conduction losses. The BUK7516-55A-127 utilizes advanced TrenchMOS™ technology for enhanced performance and efficiency. Key parameters include an input capacitance (Ciss) of 2245 pF at 25V and a threshold voltage (Vgs(th)) of 4V at 1mA. With a maximum gate-source voltage (Vgs) of ±20V and an operating junction temperature range of -55°C to 175°C, this MOSFET is suitable for power management, automotive systems, and industrial motor control. The component is supplied in a TO-220AB package, suitable for through-hole mounting and delivered in tube packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 138W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2245 pF @ 25 V |
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