BUK75150-55A,127
MOSFET N-CH 55V 11A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK75150-55A-127, offers a 55V drain-source voltage and a continuous drain current of 11A at 25°C (Tc). This TO-220AB packaged device features a maximum on-resistance of 150mOhm at 5A and 10V Vgs, with a gate charge of 5.5 nC at 10V. Designed for through-hole mounting, it has a power dissipation of 36W (Tc) and an operating temperature range of -55°C to 175°C. Key parameters include an input capacitance (Ciss) of 322 pF at 25V and a gate threshold voltage (Vgs(th)) of 4V at 1mA. This component is suitable for applications in automotive and industrial power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 322 pF @ 25 V |
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