BUK7514-55A,127
MOSFET N-CH 55V 73A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK7514-55A-127, is designed for high-performance switching applications. This through-hole component features a 55 V drain-source breakdown voltage and a continuous drain current capability of 73 A at 25°C (Tc). The low on-resistance of 14 mOhm at 25 A and 10 V gate drive voltage minimizes conduction losses. With a maximum power dissipation of 166 W (Tc) and an operating junction temperature range of -55°C to 175°C, this TO-220AB packaged device is suitable for demanding power management tasks in automotive and industrial sectors. Key parameters include a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V at 1mA. Input capacitance (Ciss) is specified at a maximum of 2464 pF at 25 V.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2464 pF @ 25 V |
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