BUK7511-55B,127
MOSFET N-CH 55V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK7511-55B-127 is a N-Channel Power MOSFET with a drain-source voltage (Vdss) of 55V. This device offers a continuous drain current (Id) of 75A at 25°C and a maximum power dissipation of 157W. The on-resistance (Rds On) is specified at 11mOhm maximum at 25A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 37 nC at 10V and input capacitance (Ciss) of 2604 pF maximum at 25V. Operating temperature ranges from -55°C to 175°C (TJ). The component is housed in a TO-220AB package, suitable for through-hole mounting. This MOSFET is utilized in industrial and automotive applications requiring robust power switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2604 pF @ 25 V |