BUK7511-55A,127
MOSFET N-CH 55V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. BUK7511-55A-127 is a TrenchMOS™ N-channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 166W (Tc). The ON-resistance (Rds On) is rated at a maximum of 11mOhm at 25A and 10V. This through-hole device is packaged in a standard TO-220AB package, facilitating robust thermal management. Key electrical characteristics include an input capacitance (Ciss) of 3093 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 4V at 1mA. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power control, and renewable energy systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3093 pF @ 25 V |
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