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BUK7506-75B,127

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BUK7506-75B,127

MOSFET N-CH 75V 75A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ BUK7506-75B-127 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 75 V. It features a low on-resistance of 5.6 mOhm at 25A and 10V, with continuous drain current capability of 75A at 25°C. The device supports a gate-source voltage range of ±20V and has a typical gate charge of 91 nC at 10V. Maximum power dissipation is rated at 300W (Tc). This component is packaged in a TO-220AB through-hole package. Applications for this MOSFET include automotive and industrial power switching.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs5.6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7446 pF @ 25 V

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