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BUK7506-55B,127

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BUK7506-55B,127

MOSFET N-CH 55V 75A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ BUK7506-55B-127 is an N-Channel Power MOSFET with a drain-source voltage (Vdss) of 55 V. It offers a continuous drain current (Id) of 75A at 25°C (Tc) and a maximum power dissipation of 254W (Tc). The device features a low on-resistance (Rds On) of 6mOhm at 25A and 10V. Gate charge (Qg) is rated at 64 nC at 10 V, and input capacitance (Ciss) is a maximum of 5100 pF at 25 V. The MOSFET is housed in a TO-220AB package suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)254W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5100 pF @ 25 V

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