BUK661R8-30C,118
MOSFET N-CH 30V 120A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ BUK661R8-30C-118 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source voltage rating and supports a continuous drain current of 120A at 25°C, with a maximum power dissipation of 263W. Key electrical characteristics include a low on-resistance of 1.9 mOhm at 25A and 10V Vgs, and a gate charge of 168 nC at 10V. The device operates with drive voltages between 4.5V and 10V and has a maximum gate-source voltage of ±16V. Mounting is facilitated by its surface mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is qualified to AEC-Q101 and is suitable for automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 168 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10918 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
