Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

BUK661R6-30C118

Banner
productimage

BUK661R6-30C118

N-CHANNEL POWER MOSFET

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 30 V 120A (Tc) 306W (Tc) Surface Mount D2PAK

Additional Information

Series: TrenchMOS™RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)306W (Tc)
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device PackageD2PAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs229 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14964 pF @ 25 V
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BSS138P,215

MOSFET N-CH 60V 360MA TO236AB

product image
PMGD290XN,115

MOSFET 2N-CH 20V 0.86A 6TSSOP

product image
PSMN102-200Y,115

MOSFET N-CH 200V 21.5A LFPAK56