BUK654R6-55C,127
MOSFET N-CH 55V 100A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK654R6-55C-127 is an N-channel power MOSFET designed for high-efficiency power switching applications. This device features a 55V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C (Tc). The BUK654R6-55C-127 offers a low on-resistance of 5.4mOhm at 25A and 10V (Vgs), minimizing conduction losses. With a maximum power dissipation of 204W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge of 124 nC at 10V (Vgs) and input capacitance of 7750 pF at 25V (Vds). The component is housed in a standard TO-220AB through-hole package and operates across an extended temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, electric vehicle powertrains, and high-power motor control systems.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 204W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7750 pF @ 25 V |
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