BUK654R0-75C,127
MOSFET N-CH 75V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK654R0-75C-127, offers a 75V drain-to-source voltage and a continuous drain current of 120A at 25°C (Tc). This device features a low on-resistance of 4.2mOhm at 25A and 10V, with a gate charge (Qg) of 234 nC at 10V. The BUK654R0-75C-127 utilizes a TO-220AB package for through-hole mounting, providing a maximum power dissipation of 306W at 25°C (Tc). Key parameters include an input capacitance (Ciss) of 15450 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2.8V at 1mA. Suitable for applications requiring robust power switching, this component finds use in industrial power supplies and automotive systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 306W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15450 pF @ 25 V |
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